Abstract
In this study, in order to control the effects of hydrogen content and carbon network structure in the outermost layer of a-C:H film on silica scaling adhesion from geothermal steam, the effects of substrate bias during deposition on the hydrogen content and carbon network structure in the outermost layer of a-C:H were investigated. For this purpose, outermost layer and bulk layer of a-C:H were analyzed by surface-enhanced Raman spectroscopy and conventional Raman spectroscopy, respectively. Silica adhesion simulation tests were performed on a-C:H films deposited at substrate biases of -400 and -700 V by using DC plasma CVD using methane gas as a source gas. The a-C:H film deposited at 400 - V had a smaller amount of silica adhesion than that of the a-C:H film deposited at -700 V. The SERS spectra for the a–C:H films showed an increase in the amount of hydrogen and a decrease in the sp2/sp3 ratio in the outermost layer due to a decrease in the substrate bias, and thus we interpreted that these differences caused the decrease of the silica adhesion.
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