Abstract
A temperature and supply voltage independent voltage reference is presented. The design is carried out using the STM 65 nm CMOS process. An analytical study is carried out to show the feasibility to adjust the temperature independent output voltage controlling the biasing of the bulk of one transistor. A feedback is introduced in order to do so. Post-layout simulations confirm the analytical results. The circuit works with a 0.9 V supply voltage and a total power consumption of 27 muW. A temperature coefficient as low as 9 ppm in the temperature range [-50degC;+200degC] is obtained when the bulk is connected to the ground. The output voltage variation for a supply voltage sweep between 0.9 V and 1.25 V is 8.6 mV.
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