Abstract
A very simple yet powerful design of a built-in current sensor for CMOS I/sub DDQ/ testing is presented. Compared with previous methods, this design has lower sensitivity to parameter deviation caused by process or temperature variations. In addition, this design provides scalable sensing resolutions and programmable current reference. Experimental results show that a test response time of less than 2 ns can be acquired when the faulty I/sub DDQ/ current is higher than 250 /spl mu/A.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing
Paper Title
Journal
Date
