Abstract
AbstractIn this article, we report a compact and low‐profile GaN‐based broadband power amplifier using silicon interposer‐MMIC (iMMIC) technology. The iMMIC technology enables a GaN HEMT to be embedded in the silicon substrate, and passive circuit elements such as metal‐insulator‐metal (MIM) capacitors, spiral inductors, and thin film resistors to be implemented on the high‐resistivity silicon (HRS) substrate using standard integrated passive device (IPD) process, so that the final power amplifier is almost indistinguishable from a single GaN MMIC power amplifier. The RLC matched all‐pass network and LC ladder type low‐pass network are employed as the input matching network and output matching network, respectively. The proposed power amplifier has a Psat of 39.1 to 39.2 dBm with a power‐added efficiency (PAE) of 40% to 50.5% in the frequency range of 2.1 to 3.5 GHz under continuous wave (CW) input signal. The proposed iMMIC power amplifier occupies only 9.9 mm2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
