Abstract
In this letter, a broadband millimeter-wave (mm-wave) continuous-mode Class-F power amplifier (PA) based on the deembedded transistor model is proposed for the fifth-generation (5G) applications. To design the output matching network at the intrinsic current-generator plane, an $S$ -parameter fitting method is proposed to extract the parasitic parameters of nonpackaged transistors over a wide frequency range. The PA is implemented in the 0.13- $\mu \text{m}$ SiGe BiCMOS process, which occupies only 0.42 mm2. By controlling the even and odd harmonics impedance, the PA achieves a 78.2% −3-dB small-signal gain fractional bandwidth from 21.1 to 48.2 GHz. The −1-dB $P_{\mathrm {sat}}$ bandwidth covers 21–43 GHz (68.8% fractional bandwidth) and the saturated output powers are 17.2–18.1 dBm. Meanwhile, the designed PA provides a 24.1%–32.1% peak power-added efficiency (PAE) over the band.
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