Abstract
This study focuses on 10 Gbit/s differential transimpedance amplifier. At the beginning of the work, the amplifier circuit is deeply analyzed and is optimized for the best phase linearity over the bandwidth resulted in a group delay variation less than 1 ps. The amplifier circuit is designed with 0.35 μm SiGe heterojunction bipolar transistor BICMOS process. 9 GHz bandwidth, almost 58 dB? transimpedance gain with less than 11.18 pA/ $$ \sqrt {\text{Hz}} $$ averaged input-referred noise current are achieved. Electrical sensitivity is 15 μApp. Power consumption is 71 mW at 3.3 V single power supply.
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