Abstract
In this paper, a DC to 40 GHz distributed amplifier (DA) employing the negative group delay technique has been successfully implemented using 0.15μm GaAs pHEMT process. It is shown that stagger-tuning negative group delay circuits can be realized in each gain cell of DA. This paper presents a significant improvement in low group delay variation compared to conventional DAs. The proposed DA provides a 15 dB average gain, 3 dB noise figure, and 8ps group delay variation which was validated through theoretical analysis and experimental results.
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