Abstract
We consider a bulk silicon crystal as a Mid-IR Raman amplifier and study its Raman amplification. A Raman amplifier is established when an intense pump laser pulse and a Raman laser pulse pass through one silicon simultaneously, with good spatial and temporal overlap. Considering the situation of pumping wavelength at 2.94 μm achievable by using an Er:YAG laser and Raman laser wavelength at 3.47 μm with the 521 cm-1 Raman shift, the properties of the output amplified Raman laser are investigated by numerically solving the coupled transfer equations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
