Abstract
Amongst various semiconductors, Bi2S3 is one of the most widely used compounds, used for various types of applications like thermoelectric and optoelectronic applications as well as biological and chemical sensors due to its various types of properties. Bi2S3 is a challenging material because of its midway band gap (Eg=1.74eV) and absorption coefficient of the order of 104 cm-1. There are a lot of techniques have developed for synthesizing the Bi2S3 thin films. Amongst them, Zhehao Zhu et al have revealed that as annealing temperature increases in sulfurvapour atmosphere, the light absorption and charge separation efficiencies enhances by achieving carrier diffusion length that is comparable to the light absorption depth, leading to high solar energy conversion efficiencies in Bi2S3. R.S. Mane et al also have reported that, the Photoelectrochemical (PEC) performance of chemically grown Bi2S3 is improved with increase in film thickness and grain size.
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