A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

Kenneth Galloway

doi:10.3390/electronics3040582

Abstract

Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities to SEB, SEGR, and microdose. There have been relatively few studies presented or published on the effects of radiation on this device technology. The S-O-A knowledge of UMOS power device degradation and failure under heavy-ion exposure is reviewed.

Highlights

The natural space radiation environment is complex, containing high-energy photons, protons, neutrons, electrons, and heavy ions
Designers of spaceborne power electronics systems that incorporate UMOS power metal-oxide semiconductor-field-effect transistors (MOSFETs) technology need this information in order to evaluate the survivability of their designs
In the 1990s, power MOSFET device design based on trench technology became feasible and held several advantages when compared to vertical double-diffused power MOSFET (VDMOS) [2,3]

Summary

Introduction

The natural space radiation environment is complex, containing high-energy photons, protons, neutrons, electrons, and heavy ions. Power metal-oxide semiconductor-field-effect transistors (MOSFETs) have dominated the power device market since the 1980s and are found in most power supplies, DC-DC converters, and low voltage controllers They are frequently selected for use in space-borne electronic systems. Power MOSFETs, in the space environment, are susceptible to parametric degradation and to at least two catastrophic failure mechanisms that can be initiated by the passage of a single heavy ion through sensitive regions of the device structure. These failures are referred to as single-event burnout (SEB) or single-event gate rupture (SEGR). Designers of spaceborne power electronics systems that incorporate UMOS power MOSFET technology need this information in order to evaluate the survivability of their designs

Evolution of Power MOSFET Technology

Microdose Effects in UMOS Technology

Discussion

Conclusion