A BN‐Doped U‐Shaped Heteroacene as a Molecular Floating Gate for Ambipolar Charge Trapping Memory

Abstract

AbstractTwo wide‐band gap U‐shaped polycyclic aromatic hydrocarbons with/without boron and nitrogen (BN‐) doping (BN‐1 and C‐1) were synthesized to tune the electronic features to suit the performance requirements for organic field‐effect transistor memory (OFET‐NVM). The chemical structures were characterized by scanning tunneling microscopy and single‐crystal diffraction. Owing to the electron‐donor effect of N and the high electron affinity of B, the BN‐1‐based OFET‐NVM displays large ambipolar memory windows and an enhanced charge storage density compared to C‐1 and most reported small molecules. A novel supramolecular system formed from BN‐1 and PMMA contributes to fabricating uniform films with homogeneous microstructures, which serve as a two‐in‐one tunnelling dielectric and charge‐trapping layer to realize long‐term charge retention and reliable endurance. Our results demonstrate that both BN doping and supramolecular engineering are crucial for the charge trapping of OFET‐NVM.