Abstract
An RRAM (resistive random-access memory) of MIM(metal-insulator-metal) structure, which occupies an area as low as 16 m2, is proposed in this letter. The bipolar HfO 2 -based RRAM devices shows low to high ON/OFF ratio (low means ratio is around 1, high means ratio is around 3) under different current and voltage compliance algorithms during SET and RESET steps. With and without forming step is not relative with the I SET /I RESET ratio. Electrode area size (16-1225 m2) is not relative with the I SET /I RESET ratio. More importantly, RRAM device is compatible in LOGIC BEOL (back end of the line). In this study, we proposed a data resolution of I SET /I RESET ratio and operation margin enlargement in ZrO 2 Ox RAM. In current art definition, data resolution of I SET /I RESET ratio is in the_range of 2-3 orders and operation margin is 4 V (operation voltage is ± 2 V). Proposed algorithm could provide I SET /I RESET ratio of_data resolution in a range of 3–5 and operation margin of 8 V. After 100 turns of test of retention, ZrO2 ReRAM showed data resolution of I SET /I RESET ratio, which degraded to 1. New methodology of R HRS /R LRS ratio showed higher data resolution in range of 3–5 orders.
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