A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping

Abstract

We report on ultra-violet (UV) photodetectors based on BaO nanoparticles by the detailed investigation of band gap and photoluminescence properties. The BaO nanomaterials were fabricated by the modified sol–gel technique. The innovation of co-doping can modulate the photoluminescence or sensing properties by narrowing the band gap related to enhancing the high carrier concentration, higher electronic lifetime, and low carriers recombination. It is investigated that the BaO nanoparticles with co-doping reveals a highly reduced band gap and exceptional photoluminescence properties as compared to the pristine BaO nanoparticles due to hindering carrier,s recombination for Ultra-violet (UV) photodetectors. The optical studies revealed that the addition of co-dopants in BaO host material creates new energy sites, so the band gap declines up to 1.31 eV as compared to that of pristine BaO (1.36 eV). The photoluminescence properties recorded with photoluminescence (PL) spectroscopy were recorded which revealed the decrease in PL intensity due to the hindering of carriers recombination with the addition of co-dopant metal ions. Furthermore, the inclusion of co-dopant metals results in an improvement in electrical conductivity because of a decline in carrier recombination, according to an I-V characteristic study. This factor contributes to enhance the photoluminescence properties of BaO which, in turn, contributes to enhance the sensing capability of the photodetector device. These obtained features modify optoelectronic properties are far superior as compared to that of previously reported literature on BaO nanomaterials, and the synthesized BaO semiconductor material becomes a potential candidate for efficient use in the ultraviolet (UV) photodetectors device applications.