A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization.

Adem Koçyiğit,Murat Yıldırım,Adem Sarılmaz,Teoman Öztürk,Faruk Ozel

doi:10.3762/bjnano.12.74

Abstract

In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.

Highlights

Spinel materials have attracted great attention due their unique electronic, magnetic, optical, and gas sensing properties
The morphological characterization results of the CuNiCoS4 nanocrystals confirmed that the nanocrystals are suitable for interfacial layers of photodiodes
The high-resolution transmission electron microscopy (HR-tunneling electron microscope (TEM)) and FE-SEM images revealed that CuNiCoS4 nanocrystals are spherical with interplanar distances of 2.87 Å

Summary

Introduction

Spinel materials have attracted great attention due their unique electronic, magnetic, optical, and gas sensing properties. Thiospinel CuNiCoS4 nanocrystals can be inserted between metal and semiconductor as interfacial layer to increase the effect of the illumination and to control electrical properties of the metal–semiconductor device. In order to determine the electrical performance of the Au/CuNiCoS4/p-Si device, I–V measurements were performed on the photodiode in the dark and under different illumination conditions.

Results

Conclusion