A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs

Abstract

This work demonstrates two 94 GHz SPDT quarter-wave shunt switches using saturated SiGe HBTs. A new mode of operation, called reverse saturation, using the emitter at the RF output node of the switch, is utilized to take advantage of the higher emitter doping and improved isolation from the substrate. The switches were designed in a 180 nm SiGe BiCMOS technology featuring 90 nm SiGe HBTs (selective emitter shrink) with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 250/300+ GHz. The forward-saturated switch achieves an insertion loss and isolation at 94 GHz of 1.8 dB and 19.3 dB, respectively. The reverse-saturated switch achieves a similar isolation, but reduces the insertion loss to 1.4 dB. This result represents a 30% improvement in insertion loss in comparison to the best CMOS SPDT at 94 GHz.