Abstract
This letter presents a low noise amplifier (LNA) RFIC with notch filter implemented in a 0.13 μm SiGe BiCMOS technology. The LNA/filter combination utilizes Q-enhanced techniques to achieve a high gain and high image rejection ratio (IRR) simultaneously. The amplifier operates at 7.27 GHz and achieves 22.5 dB gain with an IIR of 70 dB. The measured noise figure and IIP3 of the LNA are better than 5.1 dB and -13 dBm, respectively. The LNA dissipates 21 mW power with a 1.7 V supply.
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