Abstract
AbstractA three‐stage 7‐ to 14‐GHz monolithic low‐noise amplifier (LNA) has been fabricated using 0.15‐μm AlGaAs/GaAs pHEMT technology.To achieve ultra low noise figure and wide operation bandwidth, the proposed LNA uses wideband matching network and negative feedback technique. Measured results from 7 to 14 GHz demonstrate a minimum of 1.1 dB noise figure and 26 dB gain. The input and output return loss exceeded 10 dB across the band. These results demonstrate the best performance of AlGaAs/GaAs pHEMT technology for wideband and low noise applications. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2615–2617, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25547
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