Abstract
In this letter, we present the designs and development of a wideband, high output power quadruple-stacked heterojunction bipolar transistor (HBT) distributed amplifier (DA). In particular, the stacked HBT configuration can improve gain and output power while achieving a very wide bandwidth. To validate the proposed design concept, a quadruple-stacked HBT DA is designed in an indium phosphide (InP) process. The measurement results show an average gain of 16 dB from 7–115-GHz bandwidth with a maximum of 24-dBm saturated output power ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\mathrm{sat}})$</tex-math> </inline-formula> . To the best of the authors’ knowledge, this is the first time quadruple-stacked HBT is used in a DA to achieve the highest output power compared with other published work in the same frequency range.
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