A 6.7-nm beyond EUV source as a future lithography source

Abstract

We demonstrate an efficient extreme ultraviolet (EUV) source for operation at λ = 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2%BW), which is 1.6 times larger than the 0.33% (0.6%BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.