Abstract
In this letter, a packaged Low Noise Amplifier (LNA) operating at 670 GHz is presented. The LNA uses a new generation of 25 nm InP HEMT with 1.5 THz $\text {f}_{\mathrm {MAX}}$ . The eight-stage amplifier shows approximately 16 dB associated gain in package with a noise figure ranging from 9.4-9.9 dB measured across a 15 GHz bandwidth. These results represent better than 3 dB improvement in sensitivity to previously published InP HEMT results, and represent the lowest measured noise figure for any LNA at this operating frequency.
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