Abstract
A low-noise and high-gain ultra wideband (UWB) receiver was developed using a 65nm CMOS technology and a wafer-level fabricated package. In order to enhance the gain and noise figure over a wide frequency band, the resistive feedback amplifier and two cascode stages with the inductive load resonating at three different frequencies are employed. The fabricated UWB receiver showed a high gain of 72.6 dB ± 0.7 dB overall operating frequency range, and an average noise figure of 4.1 dB in 3168 to 4752 MHz, 4.3 dB in 6366 to 7920 MHz and 5.1 dB in 7392 to 8976 MHz frequency band, respectively. The noise figure at high frequency edge is lower than 6 dB. The measured sensitivities in three band groups meet all WiMedia PHY specifications.
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