A 64 GHz LNA With 15.5 dB Gain and 6.5 dB NF in 90 nm CMOS

Abstract

This paper presents an integrated LNA for millimeter-wave applications implemented in 90 nm CMOS technology. Modeling methodology based solely on electromagnetic simulations, RC parasitic extraction and device measurements up to 20 GHz allows for ldquocorrect-by-constructionrdquo design at mm-wave frequencies and first-pass silicon success. The dual-stage cascode LNA has a peak gain of 15.5 dB at 64 GHz with a NF of 6.5 dB, while drawing 26mA per stage from 1.65 V. Output is 3.8 dBm. At , each stage draws 19 mA, with a peak gain and a NF of 13.5 dB and 6.7 dB, respectively. Measured results are in excellent agreement with simulations, proving the effectiveness of the proposed design methodology. A custom set-up for mm-wave NF measurement is also extensively described in the paper.