Abstract
ABSTRACT In this paper, a novel 600 V split-gate VDMOS with the integrated trench MOS barrier Schottky (TMBS) is proposed to reduce the specific gate-drain charge (Q gd,sp) and specific reverse recovery charge (QRR). For the proposed device, the TMBS is distributed in the JFET region, and it offers a majority of the freewheeling current (IF) during the reverse-recovery period resulted in a great reduction in QRR. The TMBS also works as the vertical field plates (VFPs) in the blocking mode; therefore, the breakdown voltage (BV) is not degraded when the anti-JFET implantation is introduced to decreased the specific on-resistance (R on,sp). Compared with the conventional VDMOS (C-VDMOS), the simulation shows that QRR and Q gd,sp of the proposed structure are reduced by 68.8% and 78.4%, respectively, when the work function of Schottky contact is 4.85 eV. Moreover, R on,sp is also decreased by 25.1%.
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