Abstract
A 600V-class lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) in partial silicon-on-insulator (PSOI) is introduced to improve breakdown voltage (BV) and reduce on-resistance (Ron). The step-doped method induces an electric field peak in the surface of the device, which can reduce the surface field in the device and adjust the doping accommodation in the drift region. The adjusted drift region can allow higher doping concentration under the drain end which results in higher breakdown voltage, and accommodate more impurity atoms as a whole which provides more electrons to support higher current and thus reduce on-resistance.
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