A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices

Abstract

In this paper, a 600 V high voltage gate driver IC with excellent allowable negative VS bias capability is proposed. In order to prevent the bootstrap capacitor from overcharging, a voltage signal from negative voltage sensor is utilized to control the charging path of it when the negative voltage in VS is detected. A bilevel isolated bootstrap circuit is utilized for the level shifter and the subsequent circuit, respectively. It guarantees the normally functions even when VS is lower than − VCC. The proposed 600 V gate driver IC is fabricated in 0.5 μm 600 V Bipolar–CMOS–DMOS process. Measured results show that its basic function is normal even when Vs = − 6 V at 5 V power supply voltage. The quiescent current when Vs = − 6 V is 40.63 μA, which is approximately same with it when VS = 0 V.