Abstract
A terahertz frequency multiplier is fabricated using a 65-nm CMOS technology. A modified model for an n-type thin-oxide varactor is also created from measured S-parameter data sets around 300 and 600 GHz. The multiplier circuit produces −20.9 dB m of probe-measured output power at 595 GHz, and its performance is in a close agreement with the simulated data proving the accuracy of the modified varactor model.
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