Abstract
A silicon carbide (SiC) T-type LCL inverter can achieve smaller device loss than two-level topology, however, its improvement on power density is limited by current ripple loss on magnetic components as switching frequency increases. This paper presents a five-level T-type (5LT2) photovoltaic (PV) inverter that achieves better utilization of SiC devices than the traditional three-level T-type LCL topology at higher switching frequency. The operation principle of the SiC 5LT2 PV inverter has been presented. The key design aspects including magnetic balancing, short-circuit protection, and digital controller computation time have been discussed and methods are developed. A 60-kW PV converter including boost stage and inverter stage has been built in the laboratory, which achieves a power density of 27 W/in3 and 3 kW/kg, and measured peak efficiency of 99.2%.
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