Abstract
ABSTRACTA 60 GHz transformer‐coupled class AB 3‐stage low power amplifier (PA) has been implemented in a 130 nm standard RF‐CMOS process. The transformer, featuring direct impedance transformation and power combining is suitable for 60 GHz power amplifier design. This power amplifier operates from 1.2 V supply with 9.9 dB gain at 62 GHz, dissipates 58 mW DC power, and the reverse isolation is better than 39 dB from 50 to 67 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2487–2491, 2015
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