Abstract
In this paper, a self-compensating 6 thin-film transistor (TFT) pixel circuit with special layout considerations has been proposed to mitigate the impact of the electrical instability of hydrogenated amorphous silicon TFTs as well as applied mechanical strain. The proposed pixel circuit has been fabricated onto flexible polyethylene naphthalate (PEN) substrate and the measurement results demonstrated less than ±3% variation of its output current after an accelerated 24-h stress test under flat, tensile strain, and compressive strain conditions. In addition, the proposed pixel circuit only required a pair of signals to operate, which reduced the complexity on external IC drivers.
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