A 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE

Syed Muhammad Ammar Ali,S M Rezaul Hasan

doi:10.3390/electronics10202450

Abstract

This paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.

Highlights

A 6 GHz Integrated High-EfficiencyThe exponential rise in the demand for a high data rate in cellular and WLAN communications requires the current systems to demonstrate their capability to handle the upcoming throughput requirements
Integrated power amplifiers operable at microwave/millimeter-wave frequencies focusing 5G-communications are expected to demonstrate high efficiency and wideband operation within a small form factor
“Single-Transistor” power amplifier (PA) are desirable for 5G-mobile communications as they offer low-voltage operation, a small form factor, and a high power-added efficiency (PAE) if the PA is harmonically tuned

Summary

Introduction

A 6 GHz Integrated High-EfficiencyThe exponential rise in the demand for a high data rate in cellular and WLAN communications requires the current systems to demonstrate their capability to handle the upcoming throughput requirements. Integrated power amplifiers operable at microwave/millimeter-wave frequencies focusing 5G-communications are expected to demonstrate high efficiency and wideband operation within a small form factor. “Single-Transistor” PAs are desirable for 5G-mobile communications as they offer low-voltage operation, a small form factor, and a high power-added efficiency (PAE) if the PA is harmonically tuned.

Results

Conclusion