Abstract

This article presents a 6.89 MHz MEMS oscillator based on an ultra-low-power, low-noise, tunable gain/duty-cycle transimpedance amplifier (TIA) and a bulk Lamé-mode MEMS resonator that has a quality factor (Q) of 3.24 × 106. Self-cascoding and current-starving techniques are used in the TIA design to minimize the power consumption and tune the duty-cycle of the output signal. The TIA was designed and fabricated in TSMC 65 nm CMOS process technology. Its open-loop performance has been measured separately. It achieves a tunable gain between 107.9 dBΩ and 118.1 dBΩ while dissipating only 143 nW from a 1 V supply. The duty-cycle of the output waveform can be tuned from 23.25% to 79.03%. The TIA has been interfaced and wire bonded in a series-resonant oscillator configuration with the MEMS resonator and mounted in a small cavity standard package. The closed-loop performance of the whole oscillator has been experimentally measured. It exhibits a phase noise of −128.1 dBc/Hz and −133.7 dBc/Hz at 1 kHz and 1 MHz offsets, respectively.

Highlights

  • Timing and frequency reference oscillators are pivotal blocks in almost all electronic systems

  • To validate the fabricated design, the CMOS circuits have been tested in an openloop configuration while considering all parasitic loads to validate the transimpedance amplifier (TIA) open-loop performance

  • Five CMOS dies have been tested in total, and all the results are within 0.3% of the TT corner performance, which is in a good agreement with our Monte Carlo simulations

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Summary

Introduction

Timing and frequency reference oscillators are pivotal blocks in almost all electronic systems. MEMS-based reference oscillators have become a key alternative to those based on quartz crystal resonators to enable miniaturized systems along with high performance levels [2,3,4]. The loop sustains oscillation if the forward gain of the TIA overcomes the resonator series losses represented by RM. Transduced resonators have a higher RM in the range of tens of kΩ but are more suited for monolithic CMOS integration [5], and these devices offer a high-quality factor (Q), small size, and good stability [6,7,8,9,10,11]. Capacitive MEMS resonators require a high gain TIA to compensate for the high RM. A low phase shift near the oscillation frequency ( fo) is needed to sustain oscillation This results in the trade-off between the need for a high gain-bandwidth product and low power consumption

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