Abstract
This letter presents a <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">''</sup> -cancellation range extension method with bulk-bias control that was applied to a Multiple Gated Transistors (MGTR) technique, which is a linearity enhancement technique for RF amplifiers. Instead of adjusting the gate-biasing voltage of the auxiliary transistor (AT) (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">shift</sub> ) in conventional <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">''</sup> -cancellation, we propose to use the bulk-biasing voltage, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BS</sub> , which allows for range extension of the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">''</sup> -cancellation of AT. The proposed technique does not require any other additional biasing circuits and has the benefit of consuming less power. The proposed low noise amplifier (LNA) is implemented in 0.18 μm 1-poly-6-metal CMOS technology. Our results show that the LNA achieves a noise figure of 1.76 dB, a +12.45 dBm input third order intercept point (IIP3), and a 15 dB power gain at 0.9 GHz, with the core LNA consuming 4.5 mA from a 1.5 V power supply.
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