A 57-GHz CMOS Reflection Amplifier in 90-nm CMOS

Abstract

A reflection amplifier is designed using 90-nm bulk CMOS technology for applications in the 60-GHz frequency band. Different from the conventional configurations, a proposed capacitive transmission line at the transistor source port results in negative input resistance and return gain. The return gain is further enhanced by adding an inductor at the drain port. The fabricated die occupies 0.38 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and consumes low dc power of 4.4 mW. The measured data show a peak gain of 8.4 dB at 57 GHz.