Abstract
In this paper, a 560 GHz terahertz sub-harmonic mixer using a new half-global design method is reported. This method combines the advantages of the subdivision design method and the global design method, and greatly enhances the abilities of the optimization of matching variables while retaining the portability of the unit circuit. When the local oscillator (LO) frequency was fixed with 3 mW power at 280 GHz, average up-conversion double sideband (DSB) conversion loss of 8 dB with intermediate frequency (IF) power of −5 dBm was achieved.
Highlights
With the rapid development of the semiconductor technology, terahertz circuits operating above 300 GHz have been applied in object imaging, planetary exploration, and atmospheric remote sensing [1,2,3,4,5,6]
As the main component of terahertz solid-state receivers, the performance and reliability of terahertz mixers are critical to the entire receiving system
According to nonlinear devices, mixers can be divided into four types: hot electron bolometer (HEB) [7], super-conductor insulator superconductor (SIS) [8], transistor mixers [9], and Schottky barrier diode (SBD) mixers [10]
Summary
With the rapid development of the semiconductor technology, terahertz circuits operating above 300 GHz have been applied in object imaging, planetary exploration, and atmospheric remote sensing [1,2,3,4,5,6] In these applications, the generation and detection of terahertz band signals are critical links. As the operating frequency increases, processing errors and parasitic effects of the SDM arise for smaller shield cavities and complicated stub matching structures To solve these problems, a novel global design method (GDM) was proposed. This design method was applied for a 560 GHz Schottky diode sub-harmonic mixer.
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