Abstract
A voltage-controlled current amplifier/attenuator in a standard 0.35- ${\mu }\text{m}$ CMOS technology is presented. It is based on the resistive mirror method, using non-saturated MOSFETs. An open-loop design with no compensation capacitors provides a high stability and a small occupied chip area of 0.0126 mm2. A current gain dynamic range of 513 (54.2 dB), a gain-bandwidth product of 1.78 GHz at the largest current gain of 35.9 dB, and a maximum power consumption of 250 ${\mu }\text{W}$ with a single supply voltage of 1.3 V are achieved. In addition, an AC current source has been designed, integrated on the same chip, and used as the input of the proposed voltage-controlled amplifier/attenuator.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: IEEE Transactions on Circuits and Systems II: Express Briefs
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.