A 50 GHz SiGe BiCMOS active bandpass filter

Abstract

This paper presents a second-order active bandpass filter (BPF) at millimeter-wave frequency band using 0.13 µm SiGe BiCMOS technology. A complementary cross-coupled pair based negative resistance technique is applied to compensate for the resistive losses of microstrip line resonators. The proposed active BPF is simulated using the Keysight Technologies (formerly Agilent's Electronic Measurement Group) Advanced Design System 2016.01. The center frequency (ƒ c ), 3-dB bandwidth, and fractional bandwidth of the simulated BPF are 53.85 GHz, 14.18 GHz, and 26.33%, respectively. The BPF shows an insertion loss (IL) of 0.33 dB and a return loss (RL) of 18.03 dB at ƒ c . The minimum IL of 0.10 dB and best RL of 26.03 dB are observed in the passband. The noise figure and input 1-dB compression point (P 1dB ) at ƒ c are 7.93 dB and −3.67 dBm, respectively. The power dissipation is 2.62 mW at 1.6 V supply voltage. For the input power level of −10 dBm, the power level of the second harmonic is −46.02 dBc.