A 5 GHz CMOS low noise amplifier with a 3.25 turn spiral inductor for IEEE802.16a

Abstract

A 5.25-GHz low noise amplifier (LNA), has been proposed for use in a receiver architecture for IEEE 802.16a WMAN. The targeted frequency band is the unlicensed band UN11 5 GHz. The amplifier has been simulated with two different spiral inductor models as L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> . In our spiral inductor model we have improved "the Greenhouse spiral inductor model", then we compare the results with the case when we use the spiral inductor model of the technology. The amplifier achieves voltage gain of 16.4, 19.4 dB with a noise figure of only 1.5, 1.58 dB, the IIP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3 </sub> is 14, 13.1-dBm and the reverse isolation is about -10.7, -13.2 dB for our spiral inductor model and that of technology, respectively. Using a 0.18 mum CMOS process, the LNA dissipates 7.2 mW from a 1.8 V supply voltage in both cases. In this paper, we present an analysis of the LNA architecture