Abstract
A miniaturized Doherty power amplifier (PA) module for mobile terminals has been developed. Two GaAs HBTs and base bias circuits for a carrier amplifier and a peak amplifier are integrated onto a single chip GaAs MMIC (1.0 mm /spl times/ 1.0 mm /spl times/ 0.1 mm), which is mounted on a ceramic substrate (4.0 mm /spl times/ 4.0 mm /spl times/ 1.5 mm, alumina, dielectric constant = 8.8). In order to miniaturize the module size, a 25-Ohm environment is introduced in the module design, and two quarter-wave-length transmission lines are embedded inside the ceramic substrate. Measurement results indicate that a power-added efficiency (PAE) of 42% at 6 dB back-off, i.e. 22 dBm output power is obtained with the newly-developed Doherty PA. In other words, an improvement of 10% in PAE is achieved compared with the theoretical PAE of a conventional class B amplifier.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
