Abstract
-This paper presents the simulation result of a 4.9-GHz GaN MMIC Doherty Power Amplifier for 5G Application using a 0.25-μm gallium nitride (GaN)-HEMT process. According to the simulation results, a saturated power of 40 dBm-40.3 dBm, a saturated drain efficiency (DE) of 60%-63%, and a 6-dB back-off DE of 51%-53% are achieved from 4.8 GHz to 5 GHz. When driven by a 100MHz orthogonal frequency division multiplexing (OFDM) signal with 6.1 dB peak-to-average power ratio (PAPR), an adjacent channel leakage ratio (ACLR) of -29 dBc with a DE of 50% was achieved at an average power of 34 dBm. After a digital predistortion process, the ACLR was improved to -46 dBc.
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