A 42–46.4% PAE continuous class-F power amplifier with C<inf>gd</inf> neutralization at 26–34 GHz in 65 nm CMOS for 5G applications

Abstract

This paper presents a wideband high efficiency continuous class-F (CCF) power amplifier (PA) at mm-Wave frequencies for the first time. A tuned load with a high-order harmonic resonance network is used to shape the current and voltage waveforms for the proposed CCF CMOS PA. Further, a transformer with a tunable coupling-coefficient (k tune ) is incorporated in the tuned load network to address the detrimental feedback effect caused by the increased transistor gate-drain capacitance (C gd ) in deep submicron CMOS technology. This technique allows precise neutralization of C gd , reducing undesirable influence on the tuned load, and maximizing power-efficiency and stability. The CCF PA prototype, implemented in 65 nm CMOS exhibits more than 42% power added efficiency (PAE) over 8 GHz bandwidth (26–34 GHz), while delivering saturated output power (P sat ) of 14.75 dBm at 30 GHz. This design presents one of the highest reported PAEs among mm-Wave CMOS PAs, achieving 46.4% peak PAE at 29 GHz.