Abstract
This paper describes the design and characterization of a broadband balanced power amplifier (BPA) MMIC at K-band. The utilized technology is the 0.25µm AlGaN/GaN HEMT process provided by Fraunhofer IAF. The BPA is designed as a two-stage power amplifier (PA) with a total gate width (TGW) of 4.32mm. More than 41.5dBm of output power with a power-added efficiency (PAE) greater than 21% are demonstrated between 21 and 23GHz. Furthermore, the BPA exhibits a maximum saturated output power of 17W associated with 22% of PAE at 22.5GHz. A peak PAE of 30% is realized at a drain supply voltage of 28V.
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