A 40 Gb/s Monolithically Integrated Linear Photonic Receiver in a <formula formulatype="inline"><tex Notation="TeX">$0.25~\mu {\rm m}$</tex></formula> BiCMOS SiGe:C Technology

Abstract

This letter presents the first 40 Gb/s monolithically integrated silicon photonics linear receiver (Rx) comprising a germanium photodiode (Ge-PD) and a linear transimpedance amplifier (TIA). Measured optical-electrical (O/E) 3 dB bandwidth (BW) of the Rx is 31 GHz. At 40 Gb/s, the Rx achieves a sensitivity of $-3~{\rm dBm}$ average optical input power with BER of $2.5\times 10^{-11}$ . It operates at $\lambda =1.55 ~\mu{\rm m}$ wavelength, uses 3.3 and 3.7 V power supplies, dissipates 275 mW of power, provides maximum differential output amplitude of $500 ~{\rm mV}_{\rm pp}$ , and occupies an area of $3.2~{\rm mm}^{2}$ . The presented receiver achieves the highest bit rate among the published work in monolithically integrated silicon photonics receivers.