Abstract
This brief presents a high precision high-order curvature-compensated bandgap voltage reference (BGR) with a 3.11-V output voltage for battery-management integrated circuits. The proposed circuit utilizes the exponential characteristics of the base current and the resistance between bases of bipolar transistors to perform corrections. The curvature of subthreshold-operating MOSFETs is considered to further compensate for high-order temperature effects over a wide temperature range of 170 °C. Test results for the proposed BGR fabricated utilizing a standard 0.18- ${\mu }\text{m}$ BiCMOS process demonstrate that its line regulation is approximately 0.31 mV/V in a supply voltage range of 4.2–6.0 V. with 4-bit trimming, a temperature coefficient of 4.6 ppm/°C is obtained in the range of −40 °C to 130 °C. The active area of the proposed BGR is 634 ${\times }$ 351 ${\mu }\text{m}$ .
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