Abstract
Clean and flat (001) surfaces of CuInSe2∕GaAs grown by molecular-beam epitaxy could be prepared by the combination of a Se capping and decapping process and subsequent Ar+ ion sputtering and annealing. The formation of a (4×2) reconstruction was observed with low-energy electron diffraction. Soft x-ray photoemission spectroscopy was performed on the prepared surfaces and revealed surface core-level binding energy shifts in the Cu2p3∕2, Se3d, and In4d levels which are associated with surface atoms. The structure model of a combined metal adatom-Se dimer structure is proposed to refer to the (4×2) reconstruction.
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