Abstract
The 500 keV Xe 2+ irradiation-induced anisotropic deformation of ordered colloidal silica nanoparticulate masks is followed using 2 MeV 4He + Rutherford Backscattering Spectrometry (RBS) with different measurement geometries and the improved data analysis capabilities of the RBS-MAST spectrum simulation code. The three-dimensional (3D) geometrical transformation from spherical to oblate ellipsoidal and polygonal shape and the decrease of the mask’s hole size is described. The masking properties of the silica monolayer and the depth distribution of Xe in the underlying Si substrate vs. the irradiated Xe 2+ fluence are discussed. Field Emission Scanning Electron Microscopy (FESEM) is applied as complementary characterization tool. Our results give contribution to clarify the impact of ion–nanoparticle interactions on the potentials and limits of nanosphere lithography. We also show the capability of the conventional RBS technique to characterize laterally ordered submicron-sized three-dimensional structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
