A 3D Monte Carlo Semiconductor DeviceSimulator For Submicron Silicon MOSTransistors

Abstract

A new 3D Monte Carlo simulator has been developed for analyzing the properties of submicron Si MOS transistors using the molecular dynamics method. This program, called MiCroMOS uses the possible deepest first principles instead of any abstractions or simplifications. In this way, problems arising from the usage of a continuum view, drift-diffusion equations or effective mobility concept are inherently avoided. One of the most important new features of the program is that instead of solving Poisson's equation, the exact potential and electric field caused by the charged particles inside the simulated structure is analytically calculated, resulting in an exact modelling of all Coulomb scattering mechanisms and in real particle trajectories. 'This research has been sponsored by the Digital Equipment Co. EERP HG-001 and SW-003 projects, and by the Swedish and Hungarian governments' scientific research funds. Transactions on Engineering Sciences vol 3, © 1993 WIT Press, www.witpress.com, ISSN 1743-3533 346 Software Applications in Electrical Engineering NOTATION $(r) potential at point r tmp(r) potential at point r arising from charged impurities $n(r) potential at point r arising from electrons #p(r) potential at point r arising from holes ^mt(r) potential arising from interface charges #g(r) potential at point r caused by applied biases and boundary conditions Eimp(r) Aeld at point r caused by charged impurities En(r) field at point r caused by electrons Ep(r) field at point r caused by holes E,n((r) field at point r caused by interface charges m~J reciprocal effective mass tensor mt transversal effective mass m/ longitudinal effective mass k wave vector