Abstract
This paper describes a CMOS H-bridge driver developed as part of a system-on-chip solution. It is designed for H-bridges whose switch elements are comprised of N-channel MOSFET to drive DC-motors with up to 24-V supply. The circuit consists of two high side drivers, two low side drivers and a charge pump. The drivers' PWM operation frequency is up to 50 kHz and is controlled by 8 digital IO, enabling variable cross conduction protection delay for external MOSFET and internal push-pull configuration. Bridge motor nodes are monitored by comparators to detect short circuits to ground or V/sub CC/. The circuit is fabricated in a 0.35-/spl mu/m standard CMOS process with high-voltage module. The die area is 2.5 mm/sup 2/ including charge pump and pads. Typical power dissipation at 25 kHz PWM operation and 15nF MOSFET gate load is 9.6 mA @ 13 V.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
