Abstract
A Ka band Monolithic Microwave Integrated Circuit (MMIC) low noise amplifier (LNA) design is presented. Common source configuration with inductive degeneration was used for all transistors to balance the input match and noise figure (NF). A 4-stage 150nm Gallium Nitride (GaN) LNA has the typical NF of 3.7 dB and the minimum small signal gain of above 19.7 dB over the bandwidth of 35-37 GHz. High linearity is achieved with more than 21.6 dBm output 1 dB compression point (OP1dB) and 22.7 dBm saturated output power (Psat). The Ka band LNA has the die dimension of 4340x1200 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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