A 34-dB Dynamic Range 0.7-mW Compact Switched-Capacitor Power Detector in 65-nm CMOS

Abstract

This letter presents a wide dynamic range low power consumption power detector with a compact area in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The maximum detectable power of traditional power detector is limited due to the non-linearity of mosfet s. This problem is solved by using P-type and N-type doped material (PN) junction diodes as switches that have a linear input–output voltage relationship in the proposed power detector. In this structure, the switches work at both the positive and negative cycles to increase the dynamic range. With the increase of input power, the difference between the voltages applied to the two terminals of the diode is also increased. Thus, the current flowing through the diodes and the load resistor is augmented, boosting the output dc voltage. According to the measurement results, the power detector operates from 4 to ${\text{6 GHz}}$ with a dynamic range of 34 and $\pm {\text{1 dB}}$ error at ${\text{5 GHz}}$ . To the authors’ best knowledge, it is the first power detector that has achieved such wide dynamic range with maximum input power of ${\text{35 dBm}}$ . The core of the power detector occupies an area of ${\text{0.0036 mm}}^{2}$ and consumes 0.7-mW static power.