A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

Abstract

The realization of semiconductor laser diodes and light-emitting diodes that emit short-wavelength ultraviolet light is of considerable interest for a number of applications including chemical/biochemical analysis, high-density data storage and material processing. Group III nitride materials are one of the most promising candidates for fabricating such devices. Here we describe an AlGaN multiple-quantum-well laser diode that emits light at 342 nm, the shortest wavelength ever reported for an electrically driven laser diode. To fabricate the laser, a low-dislocation-density AlGaN layer with an AlN mole fraction of 0.3 was grown on a sapphire substrate using a hetero facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method1,2,3. An AlGaN multiple-quantum-well structure was then grown on the high-quality AlGaN layer. Lasing at a wavelength of 342.3 nm was observed under pulsed current mode at room temperature. Short-wavelength UV laser diodes are required for applications ranging from sensing, data storage and materials processing. Here, an electrically driven semiconductor laser that operates at 342.3 nm, the shortest wavelength so far, is reported. The device emits milliwatt-scale powers at room temperature when driven by pulsed current.